september 2, 1994 avionics applications rf & microwave transistors .280 2lfl (s068) epoxy sealed . refractory/gold metallization . emitter site ballasted . :1 vswr capability . low thermal resistance . input matching . overlay geometry . metal/ceramic hermetic package . p out = 35 w min. with 10.7 db gain description the MSC81035M is a medium power class c transistor designed specifically for pulsed l-band avionics applications. this device is a direct re- placement for the msc1035m. MSC81035M of- fers improved saturated ouput power and collec- tor efficiency based on the test circuit described herein. low rf thermal resistance and computerized au- tomatic wire bonding techniques ensure high reli- ability and product consistency. the MSC81035M is housed in the impac? package with internal input matching. pin connection branding 81035m order code MSC81035M absolute maximum ratings (t case = 25 c) symbol parameter value unit p diss power dissipation* (t c 100?c) 150 w i c device current* 3.0 a v cc collector-supply voltage* 55 v t j junction temperature (pulsed rf operation) 250 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 1.0 c/w *applies only to rated rf amplifier operation note: thermal resistance determined by infra-red scanning of hot-spot junction temperature at rated rf operating conditions. MSC81035M 1. collector 3. emitter 2. base 4. base thermal data 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1025 - 1150 mhz p in = 3.0 w v cc = 50 v 35 40 w h cf = 1025 - 1150 mhz p in = 3.0 w v cc = 50 v 40 % p g f = 1025 - 1150 mhz p in = 3.0 w v cc = 50 v 10.7 11.2 db note: pulse width = 10 m sec duty cycle = 1% static symbol test conditions value unit min. typ. max. bv cbo i c = 10 ma i e = 0 ma 65 v bv ebo i e = 1 ma i c = 0 ma 3.5 v bv cer i c = 10 ma r be = 10 w 65 v i ces v be = 0 v v ce = 50 v 5 ma h fe v ce = 5 v i c = 500 ma 15 120 dynamic typical performance typical broadband power amplifier MSC81035M 2/4
test circuit all dimensions are in inches. ref.: dwg. no. 101 002888 typical input impedance typical collector load impedance p in = 3.0 w v cc = 50 v normalized to 50 ohms h z cl h l m l m z in impedance data z in z cl freq. z in ( w )z cl ( w ) l = 1025 mhz 2.6 + j 8.3 7.7 + j 2.0 m = 1090 mhz 2.8 + j 8.7 7.1 + j 1.0 h = 1150 mhz 3.2 + j 4.4 6.5 - j 0.5 MSC81035M 3/4
package mechanical data ref.: dwg. no. 12-0218 rev. a information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectron- ics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replac es all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of sgs-thomson microelectronics. ?1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. MSC81035M 4/4
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